Results from Silicon Photo-Multiplier neutron irradiation test

被引：0

作者：

Faccini, R. ^{[1
,2
]}

Pinci, D. ^{[2
]}

Baldini, W. ^{[3
,4
]}

Calabrese, R. ^{[3
,4
]}

Cibinetto, G. ^{[3
,4
]}

Ramusino, A. Cotta ^{[3
,4
]}

Malaguti, R. ^{[3
,4
]}

Pozzati, M. ^{[3
,4
]}

Angelone, M. ^{[5
]}

Pillon, M. ^{[5
]}

机构：

[1] Sapienza Univ Roma, Rome, Italy

[2] Ist Nazl Fis Nucl, Sez Roma, Rome, Italy

[3] Unversita Ferrara, Ferrara, Italy

[4] INFN Ferrara, Ferrara, Italy

[5] ENEA, Frascati, Italy

来源：

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS | 2010年 / 5卷

关键词：

Silicon Photmultipliers; Neutron irradiation;

D O I：

10.1142/9789814307529_0092

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Silicon photo-multipliers, often called "SiPM", are semiconductor photon detectors built from a square matrix of avalanche photo-diodes on common silicon substrate. SiPM have been proposed for several different applications in High Energy Physics, in particular where a large detection granularity and a high photon detection efficiency is needed. In this paper the results of a radiation hardness test performed at the Frascati Neutron Generator are presented. Several SiPMs of different manufacturers have been irradiated integrating up to 7x10(10) 1-MeV-equivalent neutrons per cm(2). For the first time, their performance have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated dose of the order of 108 1-MeV-equivalent neutrons per cm(2).

引用

页码：555 / 559

页数：5

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