Dry etching damage in Pt/Pb(Zr, Ti)O-3/Pt capacitors patterned by a single photolithography process step

被引：0
|
作者：
Kumihashi, T
Kawakami, H
Torii, K
Suga, M
Kure, T
机构：
来源：
1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pt/PZT/Pt (PZT: Pb(Zr, Ti)O-3) capacitors patterned in a single photolithography process step suffers two types of dry-etching damage. First, the leakage current is increased, and second, the hysteresis characteristics of the capacitor are degraded. We observed an increase in the perimeter leakage current caused by an amorphous 5-nm-deep Pb-rich damaged layer on the PZT sidewall induced by ion incidence. Also, the remnant polarization was degraded when there was inadequate PZT crystallization. This degradation was caused by the generation of a space charge and by the aging effect.
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页码：221 / 224
页数：4
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