Scattering by linear defects in graphene: a tight-binding approach

被引：14

作者：

Rodrigues, J. N. B. ^{[1
,2
]}

Peres, N. M. R. ^{[3
,4
]}

Lopes dos Santos, J. M. B. ^{[1
,2
]}

机构：

[1] Univ Porto, CFP, Fac Ciencias, P-4169007 Oporto, Portugal

[2] Univ Porto, Dept Fis & Astron, Fac Ciencias, P-4169007 Oporto, Portugal

[3] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[4] Univ Minho, CFUM, P-4710057 Braga, Portugal

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2013年 / 25卷 / 07期

关键词：

GRAIN-BOUNDARIES; TRANSPORT;

D O I：

10.1088/0953-8984/25/7/075303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We develop an analytical scattering formalism for computing the transmittance through periodic defect lines within the tight-binding model of graphene. We first illustrate the method with a relatively simple case, the pentagon-only defect line. Afterwards, more complex defect lines are treated, namely the zz(558) and the zz(5757) ones. The formalism developed uses only simple tight-binding concepts, reducing the problem to matrix manipulations which can be easily worked out by any computational algebraic calculator.

引用

页数：20

共 50 条

[41] Tight-binding theory of native point defects in silicon
Colombo, L
ANNUAL REVIEW OF MATERIALS RESEARCH, 2002, 32 : 271 - 295
[42] Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics
Lee, Gun-Do
Wang, C. Z.
Yoon, Euijoon
Hwang, Nong-Moon
Ho, K. M.
PHYSICAL REVIEW B, 2006, 74 (24):
[43] Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method
Chuan, M. W.
Lok, S. Z.
Hamzah, A.
Alias, N. E.
Sultan, S. Mohamed
Lim, C. S.
Tan, M. L. P.
ADVANCES IN NANO RESEARCH, 2023, 14 (01) : 1 - 15
[44] Accurate tight-binding models for the π bands of bilayer graphene
Jung, Jeil
MacDonald, Allan H.
PHYSICAL REVIEW B, 2014, 89 (03):
[45] Electron localizability and polarizability in tight-binding graphene nanostructures
Evangelisti, Stefano
Bendazzoli, Gian Luigi
Monari, Antonio
THEORETICAL CHEMISTRY ACCOUNTS, 2010, 126 (3-4) : 257 - 263
[46] Electron localizability and polarizability in tight-binding graphene nanostructures
Stefano Evangelisti
Gian Luigi Bendazzoli
Antonio Monari
Theoretical Chemistry Accounts, 2010, 126 : 257 - 263
[47] Energy gap of strained graphene with tight-binding model
Yang, C.
Shaofeng, W.
Hong, X.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2010, 52 (02):
[48] Tight-binding study of bilayer graphene Josephson junctions
Munoz, W. A.
Covaci, L.
Peeters, F. M.
PHYSICAL REVIEW B, 2012, 86 (18):
[49] Strained graphene: tight-binding and density functional calculations
Ribeiro, R. M.
Pereira, Vitor M.
Peres, N. M. R.
Briddon, P. R.
Castro Neto, A. H.
NEW JOURNAL OF PHYSICS, 2009, 11
[50] Modelling point defects diffusion and interaction in silicon: The tight-binding molecular dynamics approach
Colombo, L
Bongiorno, A
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1997, 101 (09): : 1211 - 1214

← 1 2 3 4 5 →