Porous silicon as a material for enhancement of electron field emission

被引：1
|
作者：
Evtukh, AA [1 ]
Litovchenko, VG [1 ]
Litvin, YM [1 ]
Efremov, AA [1 ]
Rassamakin, YV [1 ]
Sarikov, AV [1 ]
Fedin, DV [1 ]
机构：
[1] Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001 | 2001年
关键词：
D O I：
10.1142/9789812810076_0072
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of a porous layer on silicon tips upon the electron field emission has been investigated. The porous silicon layer obtained by electrochemical method and stain-etching was studied. The improvement of emission parameters in comparison with those for single-crystalline Si tips (without porous layer) was observed at some growth conditions. At lower emission current densities the non-monotonous current-voltage characteristics were revealed. The effect of the porous silicon layer upon the electron field emission was explained by the formation of asperities (fibres) on the silicon surface. The formation of porous silicon is simulated with the of single-pore approach.
引用
收藏
页码：412 / 416
页数：5
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