Electron field emission from porous silicon prepared at low anodisation currents

被引：7
|
作者：
Evtukh, A. A. [1 ]
Litovchenko, V. G. [1 ]
Klyui, N. I. [1 ]
Semenenko, M. O. [1 ]
Kaganovich, E. B. [1 ]
Manoilov, E. G. [1 ]
机构：
[1] NAS Ukraine, VE Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2006年 / 3卷 / 01期
关键词：
electron field emission; porous silicon; resonance tunneling; photoluminescence; diamond-like carbon film; current stability; nanocrystals; energy hand diagram; work function; field enhancement coefficient;
D O I：
10.1504/IJNT.2006.008723
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The dependence of electron field emission (FE) characteristics of porous silicon (por-Si) prepared by anodisation at low current density without external bias is investigated. Effective electron FE from por-Si on p-Si flat surface was revealed. With growth of anodisation current (from 1 mA/cm(2) to 5 mA/cm(2)) the electron FE efficiency was decreased. Resonance tunnelling at electron field emission from por-Si was observed. The por-Si coating with thin diamond-like carbon film allowed the increase of the efficiency and stability of electron emission current significantly. The obtained experimental results on electron FE from por-Si on flat p-Si silicon surface were explained on the basis of electrical field enhancement coefficient growth, existence of dipole Si-H layer, lowering of por-Si electron affinity and growth of native SiO2 oxide on silicon surface. The model for explanation of resonance tunnelling from por-Si was proposed.
引用
收藏
页码：89 / 105
页数：17
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