Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

被引：8
|
作者：
Chen, GH [1 ]
Cai, RQ
Song, XM
Deng, JX
机构：
[1] Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China
[2] Coll Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 02期
关键词：
MW-CVD; porous silicon; diamond films; field electron emission;
D O I：
10.1016/j.mseb.2003.11.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the preparation of discontinuous microcrystalline diamond with special structure, deposited on a porous silicon (PS) substrate by microwave chemical vapor deposition (MW-CVD) technology was reported, and the field electron emission of the diamonds were studied. Our experimental results indicated that the diamonds have a lower field emission threshold voltage (<0.8V/mum) and a higher field emission current density (>17.5A/cm(2)). A preliminary explanation of this special field electron emission was given in our paper. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 236
页数：4
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