Interface electronic structure of Ge/ZnSe(111)

被引：0

作者：

Zhang, HF ^{[1
]}

Wang, CY ^{[1
]}

Fang, RC ^{[1
]}

Ban, DY ^{[1
]}

Li, YP ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1997年 / 14卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.

引用

页码：128 / 130

页数：3

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