ELECTRONIC-STRUCTURE OF THE ANNEALED SI(111) AND GE(111) SURFACES

被引：0

|

作者：

HEIMANN, P

HIMPSEL, FJ

REIHL, B

EASTMAN, DE

WHITE, CW

ZEHNER, DM

机构：

[1] IBM CORP,RES CTR,SAN JOSE,CA 95114

[2] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：351 / 351

页数：1

相关论文

共 50 条

[1] ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING
HIMPSEL, FJ
EASTMAN, DE
HEIMANN, P
REIHL, B
WHITE, CW
ZEHNER, DM
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1120 - 1123
[2] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE
AGRAWAL, BK
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2517 - 2520
[3] ELECTRONIC-STRUCTURE OF SI(111) SURFACES
HIMPSEL, FJ
FAUSTER, T
HOLLINGER, G
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 22 - 30
[4] ELECTRONIC-STRUCTURE OF SI(111) SURFACES
HANSSON, GV
BACHRACH, RZ
BAUER, RS
CHADI, DJ
GOPEL, W
[J]. SURFACE SCIENCE, 1980, 99 (01) : 13 - 27
[5] ELECTRONIC-STRUCTURE OF [111]SI/GE SUPERLATTICES
BASS, JM
MATTHAI, CC
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (38) : 7841 - 7846
[6] ELECTRONIC-STRUCTURE OF THE (111) AND (111) SURFACES OF GAAS
NISHIDA, M
[J]. SOLID STATE COMMUNICATIONS, 1979, 31 (07) : 513 - 516
[7] ELECTRONIC-STRUCTURE OF H CHEMISORBED ON SI(111) SURFACES
YNDURAIN, F
LOUIS, E
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 439 - 441
[8] ELECTRONIC-STRUCTURE OF VACANCIES IN SI(111) UNRECONSTRUCTED SURFACES
VERGES, JA
LOUIS, E
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6676 - 6690
[9] IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE
IVANOV, I
MAZUR, A
POLLMANN, J
[J]. SURFACE SCIENCE, 1980, 92 (2-3) : 365 - 384
[10] CLUSTER MODEL APPROACH FOR ELECTRONIC-STRUCTURE OF SI AND GE(111) AND GAAS(110) SURFACES
NISHIDA, M
[J]. SURFACE SCIENCE, 1978, 72 (04) : 589 - 616

← 1 2 3 4 5 →