Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

被引：168
|
作者：
Sekiguchi, Hiroto [1 ,3 ]
Kishino, Katsumi [1 ,2 ,3 ]
Kikuchi, Akihiko [1 ,2 ,3 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan
[3] Japan Sci & Technol Agcy, CREST, Saitama 3300012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 12期
关键词：
D O I：
10.1143/APEX.1.124002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ti-mask selective-area growth (SAG) of GaN on Ti-nanohole-patterned GaN templates by rf-plasma-assisted molecular-beam epitaxy was employed to demonstrate the fabrication of regularly arranged InGaN/GaN nanocolumns. The SAG of GaN nanocolumns strongly depended on the growth temperature (T(g)); at T(g) below 900 degrees C, no SAG occurred, but above 900 degrees C, SAG occurred. However, an excessive increase in T(g) to above 900 degrees C at a nitrogen flow rate (Q(N2)) of 3.5 sccm brought about increased inhomogeneity in the nanocolumn shape. Upon reducing Q(N2) from 3.5 to 1 sccm, uniform nanocolumn arrays were successfully grown around the critical temperature of 900 degrees C. (C) 2008 The Japan Society of Applied Physics
引用
收藏
页码：1240021 / 1240023
页数：3
相关论文
共 50 条
  • [21] Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy
    Hong, Seung Jae
    Chapman, Patrick
    Krein, Philip T.
    Kim, Kyekyoon
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1872 - 1875
  • [22] Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth
    Oto, Takao
    Mizuno, Yutaro
    Yanagihara, Ai
    Ema, Kazuhiro
    Kishino, Katsumi
    [J]. APPLIED PHYSICS EXPRESS, 2017, 10 (04)
  • [23] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernandez-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sanchez-Garcia, M. A.
    Lopez-Romero, D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [24] Effects of RF plasma parameters on the growth of InGaN GaN heterostructures using plasma-assisted molecular beam epitaxy
    Shim, KH
    Paek, MC
    Kim, KH
    Hong, SU
    Cho, KI
    Lee, HG
    Kim, J
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S350 - S354
  • [25] In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy
    Kruse, C
    Einfeldt, S
    Böttcher, T
    Hommel, D
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (21) : 3425 - 3427
  • [26] GROWING GAN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    BERESFORD, R
    [J]. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1994, 46 (03): : 54 - 58
  • [27] Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy
    Kamimura, Jumpei
    Kishino, Katsumi
    Kikuchi, Akihiko
    [J]. AIP ADVANCES, 2011, 1 (04):
  • [28] Plasma assisted molecular beam epitaxy growth of GaN
    Einfeldt, S
    Birkle, U
    Thomas, C
    Fehrer, M
    Heinke, H
    Hommel, D
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 12 - 15
  • [29] Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy
    Gridchin, V. O.
    Kotlyar, K. P.
    Reznik, R. R.
    Dvoretskaya, L. N.
    Parfen'eva, A. V.
    Mukhin, I. S.
    Cirlin, G. E.
    [J]. TECHNICAL PHYSICS LETTERS, 2020, 46 (11) : 1080 - 1083
  • [30] Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy
    V. O. Gridchin
    K. P. Kotlyar
    R. R. Reznik
    L. N. Dvoretskaya
    A. V. Parfen’eva
    I. S. Mukhin
    G. E. Cirlin
    [J]. Technical Physics Letters, 2020, 46 : 1080 - 1083
12345