Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

被引：168
|
作者：
Sekiguchi, Hiroto [1 ,3 ]
Kishino, Katsumi [1 ,2 ,3 ]
Kikuchi, Akihiko [1 ,2 ,3 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan
[3] Japan Sci & Technol Agcy, CREST, Saitama 3300012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 12期
关键词：
D O I：
10.1143/APEX.1.124002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ti-mask selective-area growth (SAG) of GaN on Ti-nanohole-patterned GaN templates by rf-plasma-assisted molecular-beam epitaxy was employed to demonstrate the fabrication of regularly arranged InGaN/GaN nanocolumns. The SAG of GaN nanocolumns strongly depended on the growth temperature (T(g)); at T(g) below 900 degrees C, no SAG occurred, but above 900 degrees C, SAG occurred. However, an excessive increase in T(g) to above 900 degrees C at a nitrogen flow rate (Q(N2)) of 3.5 sccm brought about increased inhomogeneity in the nanocolumn shape. Upon reducing Q(N2) from 3.5 to 1 sccm, uniform nanocolumn arrays were successfully grown around the critical temperature of 900 degrees C. (C) 2008 The Japan Society of Applied Physics
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收藏
页码：1240021 / 1240023
页数：3
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