Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy

被引：0
|
作者：
Imanishi, Tomohiko [1 ]
Sekiguchi, Hiroto [1 ]
Nishikawa, Satoshi [1 ]
Ozaki, Kohei [1 ]
Yamane, Keisuke [1 ]
Okada, Hiroshi [2 ]
Kishino, Katsumi [3 ]
Wakahara, Akihiro [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi, Japan
[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst, Toyohashi, Aichi, Japan
[3] Sophia Univ, Dept Engn & Appl Sci, Tokyo, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：1
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