Characterization of Vapor-Deposited Acenaphtho[1,2-k]fluoranthene Derivative Films as Active Layers of Organic Field-Effect Transistors

被引：3
|
作者：
Kunugi, Yoshihito [1 ]
Kosuge, Takao [1 ]
Okamoto, Kazuo [2 ]
机构：
[1] Tokai Univ, Fac Engn, Dept Appl Chem, Hiratsuka, Kanagawa 2591292, Japan
[2] Ushio Chemix Corp, Res Lab, Omaezaki 4371613, Japan
来源：
ELECTROCHEMISTRY | 2008年 / 76卷 / 12期
基金：
日本学术振兴会;
关键词：
Organic Field-Effect Transistor; Fluoranthene Derivatives; Molecular Orientation;
D O I：
10.5796/electrochemistry.76.865
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have developed vapor-deposited films of acenaphtho [1,2-k] fluoranthene (AF) and their 7,14-dicarbalkoxy derivatives as active layers of organic field-effect transistors (OFETs). The AF- and 7,14-dicarbmethoxyacenaphtho [1,2-k] fluoranthene (DMAF)-based OFET devices did not work sufficiently. On the other hand. the 7,14-carbethoxyacenaphtho [1,2-k] fluoranthene (DEAF)-based OFET device showed typical p-channel FET responses with a field-effect mobility of 1.7 X 10(-3) cm(2) V(-1)s(-1) and a current on/off ratio of about 10(2). According to the X-ray diffraction measurements. the carbethoxy groups could largely improve the molecular packing that is favorable for high-performance OFETs.
引用
收藏
页码：865 / 867
页数：3
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