Characterization of Vapor-Deposited Acenaphtho[1,2-k]fluoranthene Derivative Films as Active Layers of Organic Field-Effect Transistors

被引：3
|
作者：
Kunugi, Yoshihito [1 ]
Kosuge, Takao [1 ]
Okamoto, Kazuo [2 ]
机构：
[1] Tokai Univ, Fac Engn, Dept Appl Chem, Hiratsuka, Kanagawa 2591292, Japan
[2] Ushio Chemix Corp, Res Lab, Omaezaki 4371613, Japan
来源：
ELECTROCHEMISTRY | 2008年 / 76卷 / 12期
基金：
日本学术振兴会;
关键词：
Organic Field-Effect Transistor; Fluoranthene Derivatives; Molecular Orientation;
D O I：
10.5796/electrochemistry.76.865
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have developed vapor-deposited films of acenaphtho [1,2-k] fluoranthene (AF) and their 7,14-dicarbalkoxy derivatives as active layers of organic field-effect transistors (OFETs). The AF- and 7,14-dicarbmethoxyacenaphtho [1,2-k] fluoranthene (DMAF)-based OFET devices did not work sufficiently. On the other hand. the 7,14-carbethoxyacenaphtho [1,2-k] fluoranthene (DEAF)-based OFET device showed typical p-channel FET responses with a field-effect mobility of 1.7 X 10(-3) cm(2) V(-1)s(-1) and a current on/off ratio of about 10(2). According to the X-ray diffraction measurements. the carbethoxy groups could largely improve the molecular packing that is favorable for high-performance OFETs.
引用
收藏
页码：865 / 867
页数：3
相关论文
共 50 条
  • [21] Structure-Performance Correlations in Vapor Phase Deposited Self-Assembled Nanodielectrics for Organic Field-Effect Transistors
    DiBenedetto, Sara A.
    Frattarelli, David L.
    Facchetti, Antonio
    Ratner, Mark A.
    Marks, Tobin J.
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (31) : 11080 - 11090
  • [22] A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors
    Maqueira-Albo, Isis
    Bonacchini, Giorgio Ernesto
    Dell'Erba, Giorgio
    Pace, Giuseppina
    Sassi, Mauro
    Rooney, Myles
    Resel, Roland
    Beverina, Luca
    Caironi, Mario
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (44) : 11522 - 11531
  • [23] High-performance organic field-effect transistors with dielectric and active layers printed sequentially by ultrasonic spraying
    Shao, Ming
    Das, Sanjib
    Xiao, Kai
    Chen, Jihua
    Keum, Jong K.
    Ivanov, Ilia N.
    Gu, Gong
    Durant, William
    Li, Dawen
    Geohegan, David B.
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (28) : 4384 - 4390
  • [24] Polymer-Based Organic Field-Effect Transistors with Active Layers Aligned by Highly Hydrophobic Nanogrooved Surfaces
    Bulgarevich, Kirill
    Sakamoto, Kenji
    Minari, Takeo
    Yasuda, Takeshi
    Miki, Kazushi
    Takeuchi, Masayuki
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (45)
  • [25] Reduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistors
    Choi, Kyoungjun
    Nam, Sooji
    Lee, Youngbin
    Lee, Mijin
    Jang, Jaeyoung
    Kim, Sang Jin
    Jeong, Yong Jin
    Kim, Hyeongkeun
    Bae, Sukang
    Yoo, Ji-Beom
    Cho, Sung M.
    Choi, Jae-Boong
    Chung, Ho Kyoon
    Ahn, Jong-Hyun
    Park, Chan Eon
    Hong, Byung Hee
    [J]. ACS NANO, 2015, 9 (06) : 5818 - 5824
  • [26] Air-stable operation of organic field-effect transistors on plastic films using organic/metallic hybrid passivation layers
    Sekitani, Tsuyoshi
    Someya, Takao
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A): : 4300 - 4306
  • [27] Air-stable operation of organic field-effect transistors on plastic films using organic/metallic hybrid passivation layers
    Sekitani, Tsuyoshi
    Someya, Takao
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (7 A): : 4300 - 4306
  • [28] High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes
    [J]. 1600, American Chemical Society, Columbus, United States (127):
  • [29] High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward n-type polythiophenes
    Letizia, JA
    Facchetti, A
    Stern, CL
    Ratner, MA
    Marks, TJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (39) : 13476 - 13477
  • [30] Organic field-effect transistors with gate dielectric films of poly-p-xylylene derivatives prepared by chemical vapor deposition
    Yasuda, T
    Fujita, K
    Nakashima, H
    Tsutsui, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (10): : 6614 - 6618
12345