Indium droplet formation during molecular beam epitaxy of InGaN

被引：18
|
作者：
Chaly, VP
Borisov, BA
Demidov, DM
Krasovitsky, DM
Pogorelsky, YV
Shkurko, AP
Sokolov, IA
Karpov, SY
机构：
[1] ATC Semicond Devices Ltd, St Petersburg 194156, Russia
[2] Soft Impact Ltd, St Petersburg 194156, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 1-2期
关键词：
MBE; InGaN; droplet formation; surface segregation;
D O I：
10.1016/S0022-0248(99)00298-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III-V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：147 / 149
页数：3
相关论文
共 50 条
  • [21] Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
    V. N. Jmerik
    A. M. Mizerov
    T. V. Shubina
    D. S. Plotnikov
    M. V. Zamoryanskaya
    M. A. Yagovkina
    Ya. V. Domracheva
    A. A. Sitnikova
    S. V. Ivanov
    Semiconductors, 2008, 42 : 616 - 623
  • [22] Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
    Siekacz, M.
    Feduniewicz-Zmuda, A.
    Cywinski, G.
    Krysko, M.
    Grzegory, I.
    Krukowski, S.
    Waldrip, K. E.
    Jantsch, W.
    Wasilewski, Z. R.
    Porowski, S.
    Skierbiszewski, C.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) : 3983 - 3986
  • [23] Spontaneous Formation of Indium Clusters in InN Epilayers Grown by Molecular-Beam Epitaxy
    T. A. Komissarova
    V. N. Jmerik
    S. V. Ivanov
    Technical Physics Letters, 2018, 44 : 149 - 152
  • [24] Spontaneous Formation of Indium Clusters in InN Epilayers Grown by Molecular-Beam Epitaxy
    Komissarova, T. A.
    Jmerik, V. N.
    Ivanov, S. V.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (02) : 149 - 152
  • [25] Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy
    Gong, Z
    Niu, ZC
    Huang, SS
    Fang, ZD
    Sun, BQ
    Xia, JB
    APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [26] Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
    Wu, Z. H.
    Kawai, Y.
    Fang, Y. -Y.
    Chen, C. Q.
    Kondo, H.
    Hori, M.
    Honda, Y.
    Yamaguchi, M.
    Amano, H.
    APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [27] Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
    Adelmann, C
    Langer, R
    Feuillet, G
    Daudin, B
    APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3518 - 3520
  • [28] Nanoscale simulation of Indium Phosphide epitaxy by molecular beam
    Flicstein, J
    Maisonneuve, D
    Guillonneau, E
    Palmier, JF
    Harmand, JC
    Barthe, F
    Moison, JM
    ALT'99 INTERNATIONAL CONFERENCE ON ADVANCED LASER TECHNOLOGIES, 2000, 4070 : 323 - 330
  • [29] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
    Yamaguchi, Tomohiro
    Nanishi, Yasushi
    APPLIED PHYSICS EXPRESS, 2009, 2 (05)
  • [30] Metalorganic molecular beam epitaxy of InGaN layers and their optical properties
    Kim, MH
    Cho, JK
    Lee, IH
    Park, SJ
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 269 - 272
12345