Melting behavior of As-deposited silicon ingots during the floating zone single crystal growth

被引：0
|
作者：
Rost, HJ [1 ]
Riemann, H [1 ]
Ludge, A [1 ]
Bottcher, K [1 ]
Dawson, H [1 ]
机构：
[1] INST CRYSTAL GROWTH,D-12489 BERLIN,GERMANY
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：33 / 40
页数：8
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