Influence of the MOVPE Growth Parameters on the Properties of InGaAsN/GaAs MQW Structures for Solar Cells Application

被引：0

作者：

Radziewicz, Damian ^{[1
]}

Sciana, Beata ^{[1
]}

Pucicki, Damian ^{[1
]}

Serafinczuk, Jaroslaw ^{[1
]}

Tlaczala, Marek ^{[1
]}

Latkowska, Magdalena ^{[2
]}

Florovic, Martin ^{[3
]}

Kovac, Jaroslav ^{[3
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, 11-17 Janiszewskiego St, PL-50372 Wroclaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[3] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Bratislava, Slovakia

来源：

NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents the epitaxial growth of undoped multiple quantum well (MQW) - 3 x InyGa1-yAs1-xNx/GaAs - structures obtained by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE). The relations between the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and the composition of the resulting InyGa1-yAs1-xNx films were investigated. The influence of the growth temperature on the quantum well InyGa(1-y)As(1-x)N(x) parameters were observed. Based upon this experiment, the technology parameters were estimated. These results were applied to the optimization of the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and temperature for the growth of quantum well of InyGa1-yAs1-xNx.

引用

页码：123 / 126

页数：4

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[1] MOVPE OF IN(GAAS)P/INGAAS MQW STRUCTURES
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KLENK, M
KORBER, W
KOERNER, U
WEINMANN, R
ZIELINSKI, E
SPEIER, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 561 - 566
[2] Structural properties of (GaIn) (NAs)/GaAs MQW structures grown by MOVPE
Höhnsdorf, F
Koch, J
Hasse, A
Volz, K
Schaper, A
Stolz, W
Giannini, C
Tapfer, L
[J]. PHYSICA E, 2000, 8 (03): : 205 - 209
[3] Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE
Giannini, C
Carlino, E
Tapfer, L
Höhnsdorf, F
Koch, J
Stolz, W
[J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W3.54
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Gaponova, DM
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Shashkin, VI
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[5] MOVPE growth of strained InGaAsN/GaAs quantum wells
Saito, H
Makimoto, T
Kobayashi, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 416 - 420
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Reier, FW
Bornholdt, C
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Kappe, F
Morl, L
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[7] Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications
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Tyagi, R
Singh, M
Jain, RK
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 59 (1-2) : 19 - 26
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Wu, H. J.
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[9] INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100)
FREUNDLICH, A
GRENET, JC
NEU, G
LEYCURAS, A
VERIE, C
GIBART, P
LANDA, G
CARLES, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 487 - 493
[10] Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes
Hoffmann, V.
Knauer, A.
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Netzel, C.
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Weyers, M.
Traenkle, G.
Karaliunas, J. M.
Kazlauskas, K.
Jursenas, S.
Jahn, U.
van Look, J. R.
Kneissl, M.
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