Effect of metastables on a sustaining mechanism in inductively coupled plasma in Ar

被引:30
|
作者
Sato, T [1 ]
Makabe, T [1 ]
机构
[1] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1063/1.2137883
中图分类号
O59 [应用物理学];
学科分类号
摘要
We numerically predicted the spatial distribution of Ar metastables in an inductively coupled plasma (ICP) source; this distribution may be an indicator of the behavior of long-lived neutral radicals in a reactive plasma. We investigated the effect of metastables on the sustaining mechanism in ICP in Ar. The predicted two-dimensional profile of Ar metastables agreed reasonably well with experimental results. The transition of the sustaining mechanism from direct ionization to stepwise ionization is found as a function of input power at 50 mTorr. In addition, a strong hysteresis of plasma density is predicted between the increasing and decreasing phases of the input power based on the stepwise ionization of Ar metastables in the ICP. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Inductively coupled Cl2/Ar plasma:: Experimental investigation and modeling
    Efremov, AM
    Kim, DP
    Kim, CI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1568 - 1573
  • [32] Influence of the electron kinetics on Ar/NF3 inductively coupled plasma
    Levko, Dmitry
    Raja, Laxminarayan L.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (04):
  • [33] Etching mechanism of ZnO thin films in inductively coupled plasma
    Kang, Chan-Min
    Kim, Jong-Sik
    Kim, Gwan-Ha
    Kim, Chang-Il
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 65 - +
  • [34] Measurements of time resolved rf impedance of a pulsed inductively coupled Ar plasma
    Chang, Chia-Hao
    Leou, Keh-Chyang
    Chen, Chin-Hsiung
    Lin, Chaung
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2006, 15 (03): : 338 - 344
  • [36] Deep Learning Predicts Ar/O2 Plasma in Inductively Coupled Plasma Discharge
    Lee, Sang -Bin
    Kim, Ji-Hoon
    Kim, Gwan
    Park, Jun -Woo
    Chae, Byung-Kwan
    Choe, Hee-Hwan
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2023, 32 (05): : 122 - 126
  • [37] Influence of Ar gas on inductively coupled plasma etching of ZnO film in CH4/Ar
    Hiramatsu, T.
    Furuta, M.
    Li, C.
    Furuta, H.
    Matsuda, T.
    Hirao, T.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 577 - +
  • [38] Effect of gas mixing ratio on MgO etch behaviour in inductively coupled BCl3/Ar plasma
    Kim, GH
    Kim, CI
    Efremov, AM
    VACUUM, 2005, 79 (3-4) : 231 - 240
  • [39] The finite size effect in a planar inductively coupled plasma
    Chung, CW
    Kim, SS
    Seo, SH
    Chang, HY
    Yoon, NS
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) : 1181 - 1183
  • [40] A novel sustaining mechanism in capacitively coupled radio frequency plasma in oxygen
    Shibata, M
    Makabe, T
    Nakano, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (07): : 4182 - 4185