Inductively coupled Cl2/Ar plasma:: Experimental investigation and modeling

被引:49
|
作者
Efremov, AM
Kim, DP
Kim, CI
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[2] Ivanovo State Univ, Dept Microelect Devices & Mat Technol, Ivanovo 153460, Russia
来源
关键词
D O I
10.1116/1.1564030
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrophysical and kinetic characteristics Of Cl-2/Ar plasma were investigated to understand the influence of the addition. of Ar on the volume densities and fluxes of active particles, both neutral and charged. Our analysis combined both,experimental methods and plasma modeling. It was found that addition of Ar to Cl-2 leads to deformation of the electron energy distribution function and an increase of the electron mean energy due to the "transparency" effect. Direct electron impact dissociation Of Cl-2 molecules represents the main source of chlorine atoms in the plasma volume. The contributions of stepwise dissociation and ionization involving Ar metastable atoms were found to be negligible. Addition of Ar to Cl-2 causes the decrease of both electron and ion densities due to a decrease in the total ionization rate and the acceleration of heterogeneous decay of charged particles. (C) 2003 American Vacuum Society.
引用
收藏
页码:1568 / 1573
页数:6
相关论文
共 50 条
  • [1] Inductively coupled Cl2/N2 plasma:: Experimental investigation and modeling
    Kim, GH
    Efremov, AM
    Kim, DP
    Kim, CI
    MICROELECTRONIC ENGINEERING, 2005, 81 (01) : 96 - 105
  • [2] Modeling of an inductively-coupled Cl2/Ar plasma using neural network
    Kim, Moonkeun
    Jang, Hanbyeol
    Lee, Yong-Hwa
    Kwon, Kwang-Ho
    Park, Kang-Bak
    THIN SOLID FILMS, 2012, 521 : 38 - 41
  • [3] Inductively coupled Cl2/O2 plasma:: experimental investigation and modelling
    Efremov, AM
    Kim, DP
    Kim, CI
    VACUUM, 2004, 75 (03) : 237 - 246
  • [4] Volume and heterogeneous chemistry in Cl2/Ar inductively coupled plasma
    Efremov, A
    Svettsov, V
    Kim, CI
    MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 64 - 71
  • [5] Dry etching of SiC in inductively coupled Cl2/Ar plasma
    Jiang, LD
    Plank, NOV
    Blauw, MA
    Cheung, R
    van der Drift, E
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (13) : 1809 - 1814
  • [6] Inductively coupled plasma etching of III-nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
    Cho, H
    Hahn, YB
    Hays, DC
    Jung, KB
    Donovan, SM
    Abernathy, CR
    Pearton, SJ
    Shul, RJ
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.56
  • [7] Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask
    Liu, Kai
    Ren, Xiao-min
    Huang, Yong-qing
    Cai, Shi-wei
    Duan, Xiao-feng
    Wang, Qi
    Kang, Chao
    Li, Jun-shuai
    Chen, Qing-tao
    Fei, Jia-rui
    APPLIED SURFACE SCIENCE, 2015, 356 : 776 - 779
  • [8] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Sheu, JK
    Su, YK
    Chi, GC
    Jou, MJ
    Liu, CC
    Chang, CM
    Hung, WC
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1970 - 1974
  • [9] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
    不详
    不详
    J Appl Phys, 3 (1970-1974):
  • [10] Inductively coupled plasma etching of doped GaN films with Cl2/Ar discharges
    Cho, BC
    Im, YH
    Hahn, YB
    Nahm, KS
    Lee, YS
    Pearton, SJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (10) : 3914 - 3916