Implementation of V-band Power Amplifier with High Linearity in 90nm CMOS Technology

被引：0

作者：

Hsu, Heng-Ming ^{[1
]}

Chen, Meng-Syun ^{[1
]}

Weng, Jun-Hong ^{[2
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

[2] Tunghai Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

2014 IEEE WIRELESS POWER TRANSFER CONFERENCE (WPTC) | 2014年

关键词：

90nm CMOS; on-chip transformer; power amplifier; power combination; V-band;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study used 90-nm CMOS technology to design a power amplifier (PA) applicable to the V-band operation. The on-chip transformers play the power combination roles that were used to design the input, inter-stage and output impedance matching networks. To alleviate the power loss, the ground shielding technique is employed in proposed transformer. The measurement results indicated that the output power and O-PIdB achieve 13.2dBm and 11.6dBm, respectively. The gain was 10dB, the bandwidth is 20GHz, ranging from 55GHz to 75GHz, the power added efficiency was 4.1% at 60GHz, and the power dissipation was 430mW.

引用

页码：201 / 204

页数：4

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