Current-induced resistive switching effect in oxygen-deficient La0.8Ca0.2MnO3-δ films

被引：21
|
作者：
Sheng, Z. G. [1 ,2 ,3 ]
Gao, J. [1 ]
Sun, Y. P. [2 ,3 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Hefei High Magnet Field Lab, Key Lab Mat Phys, Hefei 230031, Peoples R China
[3] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 01期
关键词：
calcium compounds; colossal magnetoresistance; Curie temperature; ferromagnetic materials; lanthanum compounds; magnetic switching; magnetic thin films; magnetisation; INSULATOR-METAL TRANSITION; THIN-FILMS; MAGNETORESISTANCE; CONDUCTIVITY; MANGANITES; STATES; HEAT;
D O I：
10.1103/PhysRevB.79.014433
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A colossal current-induced resistive switching effect caused by low bias current has been found in oxygen-deficient La0.8Ca0.2MnO3-delta film at temperatures below the Curie temperature. The switching effect takes place as the bias current or voltage exceeds a threshold value I-th or V-th. An electroresistance (ER) ratio as large as 98.1% was found with a low bias current I=2 mA at temperature of 125 K. Such a current-induced ER suggests the sensitivity of ferromagnetic insulator state to the external electric field or current in the manganite films which have oxygen deficiency. These effects can be understood within the mixed-phase scenario.
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页数：5
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