SiC-based power converters

被引：0

作者：

Tolbert, Leon ^{[1
,2
]}

Zhang, Hui ^{[1
]}

Ozpineci, Burak ^{[2
]}

Chinthavali, Madhu S. ^{[2
]}

机构：

[1] Univ Tennessee, Elect Engn & Comp Sci, 414 Ferris Hall, Knoxville, TN 37996 USA

[2] Power Elect & Elect Machinery Res Ctr, Oak Ridge Natl Lab, Knoxville, TN 37932 USA

来源：

SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES | 2008年 / 1069卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper.

引用

页码：221 / +

页数：2

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