SiC-based gas sensor development

被引：46
|
作者：
Hunter, GW [1 ]
Neudeck, PG
Gray, M
Androjna, D
Chen, LY
Hoffman, RW
Liu, CC
Wu, QH
机构：
[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[2] Corez, Cleveland, OH 44135 USA
[3] Ayt Corp, NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[4] Ohio Aerosp Inst, Cleveland, OH 44142 USA
[5] Case Western Reserve Univ, Ctr Elect Design, Cleveland, OH 44106 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
electronic nose; emission; gas; high temperature; hydrocarbon; packaging; sensor;
D O I：
10.4028/www.scientific.net/MSF.338-342.1439
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.
引用
收藏
页码：1439 / 1442
页数：4
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