New superlattices for spin-polarized electron sources

被引:0
|
作者
Mamaev, YA [1 ]
Subashiev, AV [1 ]
Bolkhovityanov, YB [1 ]
Toropov, AI [1 ]
Bakharov, AK [1 ]
Revenko, MA [1 ]
Gilinskii, AM [1 ]
Yashin, YP [1 ]
Ambrajei, AN [1 ]
Rochansky, AV [1 ]
机构
[1] St Petersburg State Tech Univ, Dept Expt Phys, St Petersburg 195251, Russia
关键词
electron emission spectroscopy; semiconductor; spin dynamics; superlattice;
D O I
10.1117/12.456274
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
We report the results on polarized electron emission from a new strained InGaAlAs/AlGaAs superlattices with an enlarged band gap, modulation doping and an optimized last GaAs layer. The yield and polarization measurements show that this structure delivers more than 0.1% quantum yield at the maximum of the polarization spectrum, the maximum polarization degree being equal to 80% at room temperature. These values present a 10-fold improvement in the quantum yield over that of the previously designed InAlGaAs-AlGaAs superlattices at the same vacuum conditions.
引用
收藏
页码:19 / 21
页数:3
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