New superlattices for spin-polarized electron sources

被引：0

作者：

Mamaev, YA ^{[1
]}

Subashiev, AV ^{[1
]}

Bolkhovityanov, YB ^{[1
]}

Toropov, AI ^{[1
]}

Bakharov, AK ^{[1
]}

Revenko, MA ^{[1
]}

Gilinskii, AM ^{[1
]}

Yashin, YP ^{[1
]}

Ambrajei, AN ^{[1
]}

Rochansky, AV ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, Dept Expt Phys, St Petersburg 195251, Russia

来源：

FIFTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2002年 / 4627卷

关键词：

electron emission spectroscopy; semiconductor; spin dynamics; superlattice;

D O I：

10.1117/12.456274

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We report the results on polarized electron emission from a new strained InGaAlAs/AlGaAs superlattices with an enlarged band gap, modulation doping and an optimized last GaAs layer. The yield and polarization measurements show that this structure delivers more than 0.1% quantum yield at the maximum of the polarization spectrum, the maximum polarization degree being equal to 80% at room temperature. These values present a 10-fold improvement in the quantum yield over that of the previously designed InAlGaAs-AlGaAs superlattices at the same vacuum conditions.

引用

页码：19 / 21

页数：3

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