Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

被引：1
|
作者：
Papis-Polakowska, E. [1 ]
Kaniewski, J. [1 ]
Szade, J. [2 ]
Rzodkiewicz, W. [1 ]
Jasik, A. [1 ]
Reginski, K. [1 ]
Wawro, A. [3 ]
机构：
[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Silesian Univ, Chelkowski Inst Phy, Katowice, Poland
[3] Polish Acad sci, Inst Phys, Warsaw, Poland
来源：
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
关键词：
superlattice; GaSb; surface; interface; X-ray Photoelectron Spectroscopy; GROWTH; INSB;
D O I：
10.1016/j.phpro.2012.03.540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) have been used to extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provide precise information from topmost layers of structure and allow excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied.
引用
收藏
页码：184 / 190
页数：7
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