Surface channel current in InAs/GaSb type-II superlattice photodiodes

被引：20
|
作者：
Mou, Shin [1 ]
Li, Jian V. [1 ]
Chuang, Shun Lien [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 06期
关键词：
D O I：
10.1063/1.2783767
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We observed experimental evidences of surface channel current on the sidewall of InAs/GaSb superlattice photodiodes. We investigated the surface channel current by measuring the current-voltage (I-V) characteristics of the diodes. The experimental data compare very well with our theoretical model before and after ammonium sulfide passivation. By using the passivation, we reduced the surface channel current by five times, which supports that the surface channel current is induced by surface carriers. We believe that the surface channel current results from the inversion layer of a p-type superlattice with surface Fermi levels pinned above the conduction-band minimum in InAs/GaSb superlattices.
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页数：3
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