Negative luminescence from type-II InAs/GaSb superlattice photodiodes

被引：38
|
作者：
Olafsen, LJ [1 ]
Vurgaftman, I [1 ]
Bewley, WW [1 ]
Felix, CL [1 ]
Aifer, EH [1 ]
Meyer, JR [1 ]
Waterman, JR [1 ]
Mason, W [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期
关键词：
D O I：
10.1063/1.123935
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strong negative luminescence is displayed by type-II InAs/GaSb superlattice diodes under reverse bias. The negative emittance at room temperature is as high as 1.5 mu W/cm(2) meV at 4.9 mu m, and the negative efficiency at 3.5 mu m is 41% of the emission from a perfect blackbody at that temperature. The main features of the data are reproduced by a detailed photodiode simulation. (C) 1999 American Institute of Physics. [S0003-6951(99)05218-3].
引用
收藏
页码：2681 / 2683
页数：3
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