Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

被引：1

作者：

Papis-Polakowska, E. ^{[1
]}

Kaniewski, J. ^{[1
]}

Szade, J. ^{[2
]}

Rzodkiewicz, W. ^{[1
]}

Jasik, A. ^{[1
]}

Reginski, K. ^{[1
]}

Wawro, A. ^{[3
]}

机构：

[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Silesian Univ, Chelkowski Inst Phy, Katowice, Poland

[3] Polish Acad sci, Inst Phys, Warsaw, Poland

来源：

18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷

关键词：

superlattice; GaSb; surface; interface; X-ray Photoelectron Spectroscopy; GROWTH; INSB;

D O I：

10.1016/j.phpro.2012.03.540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) have been used to extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provide precise information from topmost layers of structure and allow excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied.

引用

页码：184 / 190

页数：7

共 50 条

[31] Quantum Efficiency Analysis of InAs-GaSb Type-II Superlattice Photodiodes
Mou, Shin
Li, Jian V.
Chuang, Shun Lien
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (5-6) : 737 - 743
[32] Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas
Cui Yu-Rong
Xu Zhi-Chang
Huang Min
Xu Jia-Jia
Chen Jian-Xin
He Li
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 40 (04) : 427 - 431
[33] Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures
Mishra, Puspashree
Pandey, Rakesh K.
Kumari, Soni
Pandey, Akhilesh
Dalal, Sandeep
Sankarasubramanian, R.
Channagiri, Samartha
Jangir, Suresh K.
Raman, R.
Srinivasan, T.
Rao, D. V. Sridhara
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 889
[34] Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector
Li, Junbin
Zhou, Xuchang
Li, Dongsheng
Mu, Yingchun
Wang, Haipeng
Cong, Shuren
Ren, Yang
Yang, Jin
Chang, Chao
Yang, Wen
Li, Yanhui
Kong, Jincheng
OPTICAL AND QUANTUM ELECTRONICS, 2021, 53 (07)
[35] Dual color longwave InAs/GaSb type-II strained layer superlattice detectors
Plis, E.
Myers, S.
Ramirez, D.
Smith, E. P.
Rhiger, D.
Chen, C.
Phillips, J. D.
Krishna, S.
INFRARED PHYSICS & TECHNOLOGY, 2015, 70 : 93 - 98
[36] Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures
Mishra, Puspashree
Pandey, Rakesh.K.
Kumari, Soni
Pandey, Akhilesh
Dalal, Sandeep
Sankarasubramanian, R.
Channagiri, Samartha
Jangir, Suresh K.
Raman, R.
Srinivasan, T.
Rao, D.V. Sridhara
Journal of Alloys and Compounds, 2022, 889
[37] Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs
Kwan, D. C. M.
Kesaria, M.
Anyebe, E. A.
Alshahrani, D. O.
Delmas, M.
Liang, B. L.
Huffaker, D. L.
APPLIED PHYSICS LETTERS, 2021, 118 (20)
[38] Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures
Rodriguez, J. B.
Plis, E.
Lee, S. J.
Kim, H.
Bishop, G.
Sharma, Y. D.
Dawson, L. R.
Krishna, S.
Jones, C.
INFRARED TECHNOLOGY AND APPLICATIONS XXXIII, 2007, 6542
[39] Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector
Junbin Li
Xuchang Zhou
Dongsheng Li
Yingchun Mu
Haipeng Wang
Shuren Cong
Yang Ren
Jin Yang
Chao Chang
Wen Yang
Yanhui Li
Jincheng Kong
Optical and Quantum Electronics, 2021, 53
[40] Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range
Wei, YJ
Hood, A
Yau, HP
Gin, A
Razeghi, M
Tidrow, MZ
Nathan, V
APPLIED PHYSICS LETTERS, 2005, 86 (23) : 1 - 3

← 1 2 3 4 5 →