High-frequency low-power fractional frequency multiplier

被引:0
|
作者
Miao, Yannan N. [1 ]
Boon, Chirn Chye [1 ]
Do, Manh Anh [1 ]
Yeo, Kiat Seng [1 ]
Lim, Wei Meng [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
CMOS; fractional frequency multiplier; injection-locked oscillator; BAND; OSCILLATORS; DIVIDER; VCO;
D O I
10.1002/mop.27236
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The topology of fractional frequency multiplier (FFM) is proposed for high-frequency and low-power application. Based on the topology, a x (3/2) FFM is designed and fabricated in a 0.18 mu m CMOS technology. The FFM's output power is larger than 0 dBm in its operation range from 15.3 to 18.45 GHz. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:146149, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27236
引用
收藏
页码:146 / 149
页数:4
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