High-frequency low-power fractional frequency multiplier

被引：0

作者：

Miao, Yannan N. ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Do, Manh Anh ^{[1
]}

Yeo, Kiat Seng ^{[1
]}

Lim, Wei Meng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2013年 / 55卷 / 01期

关键词：

CMOS; fractional frequency multiplier; injection-locked oscillator; BAND; OSCILLATORS; DIVIDER; VCO;

D O I：

10.1002/mop.27236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The topology of fractional frequency multiplier (FFM) is proposed for high-frequency and low-power application. Based on the topology, a x (3/2) FFM is designed and fabricated in a 0.18 mu m CMOS technology. The FFM's output power is larger than 0 dBm in its operation range from 15.3 to 18.45 GHz. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:146149, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27236

引用

页码：146 / 149

页数：4

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