The 4.2 K non-barrier transport J(c) values of the powder-in-tube (PIT) in-situ MgB2 wires have been enhanced by cold high pressure densification (CHPD). With respect to the control wire, the 1.5 GPa pressure induced the Jc improvement of the wire at 4.2 K and 10 T by 25 %. The J(c) enhancement induced by the CHPD may result from two aspects. First, the CHPD resulted in the reduction of the transverse MgB2 core area. Second, the grain connectivity of the PIT in-situ MgB2 wire was improved by the CHPD, which is reflected by the reduced porosity.
机构:
Nat Hist Museum, London SW7 53D, EnglandNat Hist Museum, London SW7 53D, England
Welch, Mark D.
Crichton, Wilson A.
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European Synchrotron Radiat Facil, F-38043 Grenoble 9, France
UCL, Dept Earth Sci, London WC1E 6BT, EnglandNat Hist Museum, London SW7 53D, England
机构:
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal UniversityCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University
蔺健妍
杜鑫
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Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal UniversityCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University
杜鑫
杨国春
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Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal UniversityCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University