PRESSURE-INDUCED METALLIZATION OF ZNSE

被引：52

作者：

ITKIN, G ^{[1
]}

HEARNE, GR ^{[1
]}

STERER, E ^{[1
]}

PASTERNAK, MP ^{[1
]}

POTZEL, W ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E15,W-8000 MUNICH,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.51.3195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations. © 1995 The American Physical Society.

引用

页码：3195 / 3197

页数：3

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