Polarization Switching Behavior of YMnO3 Thin Film at around Magnetic Phase Transition Temperature

被引：8
|
作者：
Maeda, Kazuhiro [1 ]
Yoshimura, Takeshi [1 ]
Fujimura, Norifumi [1 ]
机构：
[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 09期
关键词：
EPITAXIAL-FILMS; HYSTERESIS LOOP; ELECTRIC-FIELD;
D O I：
10.1143/JJAP.48.09KB05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of antiferromagnetic ordering on the ferroelectric polarization switching behavior of an YMnO3 epitaxial thin film were investigated. The effects of magnetic ordering on ferroelectric polarization switching and dielectric permittivity under bias electric field at around the Neel temperature of YMnO3 (80 K) were studied. From temperature dependences of the dielectric permittivity and spontaneous polarization, an increase in the domain size with decreasing temperature was suggested. From high-speed capacitance measurement, it was also determined that domain wall motion increased with decreasing temperature. Moreover, it was determined that the suppression of polarization switching started at around 120-130 K, which is higher than Neel temperature of YMnO3. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页码：09KB051 / 09KB054
页数：4
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