Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

被引：227
|
作者：
Du, Yuchen [1 ,2 ]
Liu, Han [1 ,2 ]
Neal, Adam T. [1 ,2 ]
Si, Mengwei [1 ,2 ]
Ye, Peide D. [1 ,2 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 10期
基金：
美国国家科学基金会;
关键词：
Contact resistance; doping; MoS2; MOSFET; sheet resistance; threshold voltage; TRANSITION; HOLE;
D O I：
10.1109/LED.2013.2277311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals.
引用
收藏
页码：1328 / 1330
页数：3
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