Exciton localization in alloy/alloy interfaces of InGaAs/GaAs(001) stepped quantum wells

被引：0
|
作者：
D'Andrea, A [1 ]
Fernández-Alonso, F [1 ]
Righini, M [1 ]
Schiumarini, D [1 ]
Selci, S [1 ]
Tomassini, N [1 ]
机构：
[1] CNR, MITER, Ist Metodol Avanzate Inorgan, I-00016 Monterotondo, Italy
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have performed reflectivity and photoluminescence measurements on a set of asymmetric InGaAs/GaAs quantum wells. Reflectivity spectra are in good agreement with our theoretical predictions. Luminescence measurements show a large discrepancy with respect to what it is observed in symmetric quantum wells of similar structural characteristics. We are led to conclude that such differences can be mainly ascribed to the role played by the In-alloy/In-alloy interface.
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页码：407 / 408
页数：2
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