EXCITON PHOTOLUMINESCENCE LINEWIDTHS IN VERY NARROW ALGAAS/GAAS AND GAAS/INGAAS QUANTUM WELLS

被引：31
|
作者：
BERTOLET, DC [1 ]
HSU, JK [1 ]
LAU, KM [1 ]
KOTELES, ES [1 ]
OWENS, D [1 ]
机构：
[1] GTE LABS INC,WALTHAM,MA 02254
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期
关键词：
D O I：
10.1063/1.342027
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6562 / 6564
页数：3
相关论文
共 50 条
  • [1] Photoluminescence studies on pseudomorphic δ-doped AlGaAs/InGaAs/GaAs quantum wells
    Wang, XG
    Chang, Y
    Gui, YS
    Chu, JH
    Cao, X
    Zeng, YP
    Kong, MY
    [J]. JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (05) : 333 - 337
  • [2] Photoluminescence studies on pseudomorphic δ-doped AlGaAs/InGaAs/GaAs quantum wells
    Wang, Xiaoguang
    Chang, Yong
    Gui, Yongsheng
    Chu, Junhao
    Cao, Xin
    Zeng, Yiping
    Kong, Meiying
    [J]. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2000, 19 (05): : 333 - 337
  • [3] EXCITON PHOTOLUMINESCENCE OF SURFACE QUANTUM-WELLS IN A GAAS/ALGAAS SYSTEM
    ASTRATOV, VN
    VLASOV, YA
    [J]. SEMICONDUCTORS, 1993, 27 (07) : 606 - 612
  • [4] ENHANCED EXCITON MOBILITIES IN GAAS/ALGAAS AND INGAAS/INP QUANTUM-WELLS
    HILLMER, H
    FORCHEL, A
    TU, CW
    SAUER, R
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B235 - B239
  • [5] AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
    Watanabe, T
    Yamamoto, T
    Vaccaro, PO
    Ohnishi, H
    Fujita, K
    [J]. MICROELECTRONICS JOURNAL, 1996, 27 (4-5) : 411 - 421
  • [6] Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells
    LAU, KM
    JONES, SH
    HSU, JK
    BERTOLET, DC
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2466 - 2469
  • [7] PHOTOLUMINESCENCE STUDIES OF PSEUDOMORPHIC MODULATION-DOPED ALGAAS/INGAAS/GAAS QUANTUM WELLS
    DODABALAPUR, A
    KESAN, VP
    HINSON, DR
    NEIKIRK, DP
    STREETMAN, BG
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1675 - 1677
  • [8] THERMAL QUENCHING OF THE PHOTOLUMINESCENCE OF INGAAS/GAAS AND INGAAS/ALGAAS STRAINED-LAYER QUANTUM-WELLS
    LAMBKIN, JD
    DUNSTAN, DJ
    HOMEWOOD, KP
    HOWARD, LK
    EMENY, MT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (19) : 1986 - 1988
  • [9] DIFFERENTIAL REFLECTANCE SPECTROSCOPY OF INGAAS/GAAS AND ALGAAS/GAAS QUANTUM-WELLS
    SHWE, C
    GAL, M
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1910 - 1912
  • [10] InGaAs/GaAs quantum wells: A standard photoluminescence system?
    Capizzi, M
    Martelli, F
    Polimeni, A
    [J]. ANNALES DE PHYSIQUE, 1995, 20 (03) : 183 - 189
12345