Exciton localization in alloy/alloy interfaces of InGaAs/GaAs(001) stepped quantum wells

被引：0
|
作者：
D'Andrea, A [1 ]
Fernández-Alonso, F [1 ]
Righini, M [1 ]
Schiumarini, D [1 ]
Selci, S [1 ]
Tomassini, N [1 ]
机构：
[1] CNR, MITER, Ist Metodol Avanzate Inorgan, I-00016 Monterotondo, Italy
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have performed reflectivity and photoluminescence measurements on a set of asymmetric InGaAs/GaAs quantum wells. Reflectivity spectra are in good agreement with our theoretical predictions. Luminescence measurements show a large discrepancy with respect to what it is observed in symmetric quantum wells of similar structural characteristics. We are led to conclude that such differences can be mainly ascribed to the role played by the In-alloy/In-alloy interface.
引用
收藏
页码：407 / 408
页数：2
相关论文
共 50 条
  • [41] Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    Yablonsky, A. N.
    Morozov, S. V.
    Gaponova, D. M.
    Aleshkin, V. Ya.
    Shengurov, V. G.
    Zvonkov, B. N.
    Vikhrova, O. V.
    Baidus', N. V.
    Krasil'nik, Z. F.
    SEMICONDUCTORS, 2016, 50 (11) : 1435 - 1438
  • [42] Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
    Martini, S
    Quivy, AA
    Tabata, A
    Leite, JR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04): : 1991 - 1996
  • [43] Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
    Martini, S
    Quivy, AA
    Tabata, A
    Leite, JR
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2280 - 2289
  • [44] Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    A. N. Yablonsky
    S. V. Morozov
    D. M. Gaponova
    V. Ya. Aleshkin
    V. G. Shengurov
    B. N. Zvonkov
    O. V. Vikhrova
    N. V. Baidus’
    Z. F. Krasil’nik
    Semiconductors, 2016, 50 : 1435 - 1438
  • [45] Electric and Magnetic Field Effects on the Exciton Localization in a Modulation Doped InGaAs/GaAs Quantum Well
    Vashisht, Geetanjali
    Haldar, S.
    Porwal, S.
    Kumar, R.
    Dixit, V. K.
    DAE SOLID STATE PHYSICS SYMPOSIUM 2019, 2020, 2265
  • [46] DIAMAGNETISM AS A PROBE OF EXCITON LOCALIZATION IN QUANTUM WELLS
    NASH, KJ
    SKOLNICK, MS
    CLAXTON, PA
    ROBERTS, JS
    PHYSICAL REVIEW B, 1989, 39 (15) : 10943 - 10954
  • [47] EFFECT OF ALLOY DISORDER AND STRUCTURAL DEFECTS ON EXCITONIC PROPERTIES IN (100)-ORIENTED AND (311)-ORIENTED INGAAS/GAAS QUANTUM-WELLS
    GUIMARAES, FEG
    LUBYSHEV, D
    CHITTA, VA
    BASMAJI, P
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (03) : 361 - 365
  • [48] INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS
    XU, QA
    XU, ZY
    ZHENG, BZ
    XU, JZ
    CHINESE PHYSICS, 1991, 11 (02): : 458 - 465
  • [49] Exciton spin relaxation dynamics in InGaAs/InP quantum wells
    Akasaka, S
    Miyata, S
    Kuroda, T
    Tackeuchi, A
    APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2083 - 2085
  • [50] Inversion of Zeeman splitting of exciton states in InGaAs quantum wells
    Grigoryev, P. S.
    Yugov, O. A.
    Eliseev, S. A.
    Efimov, Yu. P.
    Lovtcius, V. A.
    Petrov, V. V.
    Sapega, V. F.
    Ignatiev, I. V.
    PHYSICAL REVIEW B, 2016, 93 (20)
12345