Strontium bismuth tantalate thin film deposition by liquid-delivery MOCVD using novel liquid bismuth precursors

被引：1
|
作者：
Silinskas, M.
Lisker, M.
Matichyn, S.
Burte, E. P.
Hempel, T.
Hyeon, J.
Lorenz, V.
Edelmannn, F.
机构：
[1] Univ Magdeburg, Inst Micro & Sensor Syst, D-39106 Magdeburg, Germany
[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany
[3] Univ Magdeburg, Chem Inst, D-39106 Magdeburg, Germany
来源：
INTEGRATED FERROELECTRICS | 2006年 / 79卷
关键词：
D O I：
10.1080/10584580600659555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel liquid bismuth precursors (triallylbismuth (Bi(CH2CHCH=2) and tributylbismuth (Bi(C4H9)(3))) were tested for metalorganic chemical vapor deposition (MOCVD). Strontiumbis-pentaethoxy methoxyethoxy tantalate (Sr[Ta(OEt)(5)(OC2H4OMe)](2)) was used as Sr-Ta source. The growth rates were <= 10 nm/h for triallylbismuth and for triphenylbismuth, <= 1000 nm/h for tributylbismuth, and <= 60 nm/h for Sr[Ta(OEt)(5)(OC2H4OMe)](2) . The deposition rate of SBT was always lower than the rate of bismuth oxide. A decrease of the deposition pressure improved uniformity of the film thickness but reduced the deposition rate of the films. XPS depth profiling indicated more metallic bond characteristics of Ti, Sr, and Bi after ion bombardment.
引用
收藏
页码：195 / 202
页数：8
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