Dense PLZT films grown on nickel substrates by PVP-modified sol-gel method

被引:13
|
作者
Ma, Beihai [1 ]
Chao, Sheng [1 ]
Narayanan, Manoj [1 ]
Liu, Shanshan [1 ]
Tong, Sheng [1 ]
Koritala, Rachel E. [2 ]
Balachandran, Uthamalingam [1 ]
机构
[1] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
PB(ZR; TI)O-3; THIN-FILMS; ELECTRICAL-PROPERTIES; CRITICAL THICKNESS; RESIDUAL-STRESS; METAL FOILS; DEPOSITION; PZT;
D O I
10.1007/s10853-012-6857-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have successfully grown ferroelectric Pb-0.92 La0.08Zr0.52Ti0.48O3 (PLZT) films on base metal foils by chemical solution deposition using sol-gel solutions containing polyvinylpyrrolidone. Under zero-bias field, we measured a dielectric constant of approximate to 820 and dielectric loss of approximate to 0.06 at room temperature, and a dielectric constant of approximate to 1250 and dielectric loss of approximate to 0.03 at 150 degrees C. In addition, leakage current density of approximate to 1.5 x 10(-8) A/cm(2), remanent polarization of approximate to 11.2 mu C/cm(2), and coercive field of approximate to 40.6 kV/cm were measured at room temperature on a approximate to 3-mu m-thick PLZT film grown on LaNiO3-buffered nickel substrate. Finally, energy density approximate to 25 J/cm(3) was measured from the P-E hysteresis loop at an applied field of 2 x 10(6) V/cm.
引用
收藏
页码:1180 / 1185
页数:6
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