Optical and Electrical Properties of ZnO Thin Films Grown by Sol-Gel Method

被引：9

作者：

Bala, Waclaw ^{[1
]}

Zorenko, Yurij ^{[1
,2
]}

Savchyn, Volodymyr ^{[2
]}

Voznyak, Taras ^{[2
]}

Paprocki, Kazimierz ^{[1
]}

Popielarski, Pawel ^{[1
]}

Szybowicz, Miroslaw ^{[3
]}

机构：

[1] Kazimierz Wielki Univ, Inst Phys, Weyssenhoff Sqr 11, PL-85090 Bydgoszcz, Poland

[2] Lvov Ivan Franko State Univ, Dept Elect, Lvov 79017, Ukraine

[3] Poznan Univ Tech, Fac Tech Phys, 60965 Poznan, Poland

来源：

OXIDE MATERIALS FOR ELECTRONIC ENGINEERING - FABRICATION, PROPERTIES AND APPLICATIONS | 2013年 / 200卷

关键词：

Zinc oxide; Photoluminescence; Cathodoluminescence; Raman spectra; Sol-gel method; Admittance spectroscopy; ZINC-OXIDE; SPRAY-PYROLYSIS; GREEN; PHOTOLUMINESCENCE; LUMINESCENCE; MECHANISMS; PARTICLES; CRYSTALS;

D O I：

10.4028/www.scientific.net/SSP.200.14

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ZnO thin films have been deposited on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650 K to 850 K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12-350 K. The structural properties of the ZnO thin films were studied using X-ray diffraction and SEM methods. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. I-V. C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries and contacts of the ZnO film were obtained.

引用

页码：14 / +

页数：3

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