Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon

We compare the recombination properties of a large number of grain boundaries in multicrystalline silicon wafers with different contamination levels and investigate their response to phosphorous gettering and hydrogenation. The recombination activity of a grain boundary is quantified in terms of the effective surface recombination velocity S-GB based on photoluminescence imaging and 2-D modeling of the emitted photoluminescence signal. Our results show that varying impurity levels along the ingot significantly impact the grain boundary behavior. Grain boundaries from the middle of the ingot become more recombination active after either gettering or hydrogenation alone, whereas grain boundaries from the top and bottom of the ingot have a more varied response. Hydrogenation, in general, is much more effective on gettered grain boundaries compared with as-grown grain boundaries. A close inspection of their injection dependence reveals that while some grain boundaries exhibit little injection dependence before gettering, others show a relatively large injection dependence, with their S-GB increasing as the injection level decreases. The former type tend not to be recombination active after both gettering and hydrogenation and are less likely to impact the final cell performance, in comparison with grain boundaries of the latter type.