Precipitation in low temperature grown GaAs

被引：4
|
作者：
Herms, M
Irmer, G
Goerigk, G
Bedel, E
Claverie, A
机构：
[1] Branch Lab Dresden, Fraunhofer Inst Non Destruct, D-01326 Dresden, Germany
[2] Tech Univ Freiberg, Bergakad Freiberg, D-09596 Freiberg, Germany
[3] Forschungszentrum Julich, Inst Festkorperforsch, Julich, Germany
[4] CNRS, LAAS, F-31077 Toulouse, France
[5] CNRS, CEMES, F-31055 Toulouse, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷
关键词：
low temperature grown gallium arsenide; arsenic precipitates; anomalous small angle X-ray scattering; Raman scattering; transmission electron microscopy;
D O I：
10.1016/S0921-5107(01)01004-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time the anomalous small angle X-ray scattering (ASAXS). All the results agree that the average size increases with increasing annealing temperature but the ASAXS data indicate that the precipitates can be divided into two parts described by separate size distributions. The number density of precipitates around 5 nm size has been estimated to be at least two orders of magnitude higher than that of larger precipitates. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：466 / 469
页数：4
相关论文
共 50 条
  • [21] Study of GaAs layers grown by MBE at low temperature
    Deng, Hangjun
    Fan, Tiwen
    Wang, Zhanguo
    Liang, Jiben
    Zhu, Zhanping
    Li, Ruigang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (05): : 317 - 321
  • [22] The behavior of As precipitates in low-temperature-grown GaAs
    Bourgoin, JC
    Khirouni, K
    Stellmacher, M
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 442 - 444
  • [23] Nonstoichiometric Low-Temperature Grown GaAs Nanowires
    Alvarez, Adrian Diaz
    Xu, Tao
    Tuetuencueoglu, Goezde
    Demonchaux, Thomas
    Nys, Jean-Philippe
    Berthe, Maxime
    Matteini, Federico
    Potts, Heidi A.
    Troadec, David
    Patriarche, Gilles
    Lampin, Jean-Francois
    Coinon, Christophe
    Fontcuberta i Morral, Anna
    Dunin-Borkowski, Rafal E.
    Ebert, Philipp
    Grandidier, Bruno
    NANO LETTERS, 2015, 15 (10) : 6440 - 6445
  • [24] Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs
    Huang, JH
    Hsieh, LZ
    Guo, XJ
    Su, YO
    APPLIED PHYSICS LETTERS, 2003, 82 (02) : 305 - 307
  • [25] Temperature dependence of the Fermi level in low-temperature-grown GaAs
    Chen, YH
    Yang, Z
    Wang, ZG
    Li, RG
    APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1866 - 1868
  • [26] The conduction barrier at the interface between low temperature grown GaAs and undoped GaAs
    Maranowski, KD
    Ibbetson, JP
    Campman, KL
    Gossard, AC
    APPLIED SURFACE SCIENCE, 1996, 104 : 621 - 625
  • [27] Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature
    Ushanov, V. I.
    Chaldyshev, V. V.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2018, 52 (13) : 1704 - 1707
  • [28] Characterization of low temperature GaAs grown by molecular beam epitaxy
    Lee, WC
    Hsu, TM
    Chyi, JI
    Lee, GS
    Li, WH
    Lee, KC
    APPLIED SURFACE SCIENCE, 1996, 92 : 66 - 69
  • [29] Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature
    Stellmacher, M
    Schnell, JP
    Adam, D
    Nagle, J
    APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1239 - 1241
  • [30] Experimental evaluation of the carrier lifetime in GaAs grown at low temperature
    A. A. Pastor
    P. Yu. Serdobintsev
    V. V. Chaldyshev
    Semiconductors, 2012, 46 : 619 - 621
12345