CMOS Schottky diode microwave power detector fabrication, Spice modeling, and applications

被引：0

作者：

Jeon, W ^{[1
]}

Melngailis, J ^{[1
]}

Newcomb, RW ^{[1
]}

机构：

[1] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

来源：

DELTA 2006: THIRD IEEE INTERNATIONAL WORKSHOP ON ELECTRONIC DESIGN, TEST AND APPLICATIONS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35 mu CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schotkty diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.

引用

页码：17 / +

页数：2

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