Fabrication and characterization of hydrothermally grown MgZnO nanorod films for Schottky diode applications

Pure and Mg doped ZnO nanorod films were grown on p type silicon substrates by two step hydrothermal method. A solution of 60 mM concentration (by mixing zinc acetate with ethyl alcohol) is made for seed layer deposition. The main growth of pure ZnO and Mg [2 and 5 weight percent (wt%)] doped ZnO nanorod films were done after growing seed layer of undoped ZnO. The structural morphology of the pure and Mg doped ZnO nanorod (NR) films were characterized by X-ray diffraction and scanning electron microscopy. All the NRs were grown well on the ZnO seed layers and their top surface was hexagonal in shape. The electrical characterization of the Pd/ZnO and Pd/MgZnO NR Schottky contacts were studied by using microprobe arrangements. The values of ideality factor, barrier height and reverse saturation current were calculated from I to V characteristics of Schottky diodes. The study demonstrates that Pd/ZnO and Pd/MgZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute of conventional Schottky diodes for optoelectronic applications.