Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC

被引:0
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作者
Ceccarelli, R. [1 ,2 ]
Meschini, M. [1 ]
Viliani, L. [1 ]
Dinardo, M. [3 ,4 ]
Gennai, S. [3 ]
Menasce, D. [3 ]
Moroni, L. [3 ,4 ]
Zuolo, D. [3 ,4 ]
Demaria, L. [5 ]
Monteil, E. [5 ]
Gaioni, L. [6 ,7 ]
Messineo, A. [8 ,9 ]
Curras, E. [10 ]
Duarte, J. [10 ]
Fernandez, M. [10 ]
Gomez, G. [10 ]
Garcia, A. [10 ]
Gonzalez, J. [10 ]
Silva, E. [10 ]
Vila, I. [10 ]
Dalla Betta, G. F. [11 ]
Mendicino, R. [8 ,11 ]
Boscardin, M. [12 ]
机构
[1] INFN Firenze, Florence, Italy
[2] Univ Firenze, Florence, Italy
[3] INFN Milano Bicocca, Milan, Italy
[4] Univ Milano Bicocca, Milan, Italy
[5] INFN Torino, Turin, Italy
[6] INFN Pavia, Pavia, Italy
[7] Univ Bergamo, Bergamo, Italy
[8] INFN, Rome, Italy
[9] Univ Pisa, Pisa, Italy
[10] IFCA, Santander, Spain
[11] Univ Trento, Trento, Italy
[12] FBK Fdn Bruno Kessler, Trento, Italy
基金
欧盟地平线“2020”;
关键词
D O I
暂无
中图分类号
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号
摘要
The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, highradiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10(16) n(eq)/cm(2) at similar to 3cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si DirectWafer Bonding technique, which allows for the production of sensors with 100 mu m and 130 mu m active thickness for planar sensors, and 130 m m for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules, bumpbonded to the RD53A readout chip, have been tested on beam. First results on their performance before and after irradiation are presented.
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页数:6
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