High performance, highly reliable FD/SOI I/O MOSFETs in contemporary high-performance PD/SOI CMOS

被引：0

作者：

Trivedi, V. P. ^{[1
]}

Winstead, B. ^{[1
]}

Choi, P. ^{[1
]}

Kang, L. ^{[1
]}

Luo, T. ^{[1
]}

Khazhinsky, M. ^{[1
]}

Haggag, A. ^{[1
]}

Parsons, S. ^{[1
]}

Sanchez, H. ^{[2
]}

Moosa, M. ^{[1
]}

Kolagunta, V. ^{[1
]}

Cheek, J. ^{[1
]}

机构：

[1] Freescale Semicond Inc, TSO, ASTS, 3501 Bluestein Blvd MD K10, Austin, TX 78721 USA

[2] Freescale Semicomduc Inc, Austin, TX 78729 USA

来源：

2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integration of hilly-depleted SOI (FD/SOI) MOSFETs for high performance 3.3V/2.5V I/O applications in contemporary high-performance partially-depleted SOI (PD/SOI) CMOS is reported for the first time. The FD/SOI MOSFETs feature dual etch-stop layer (dESL) stressor, optimized (minority) carrier lifetime killing implant in source/drain extension, and optimized in-situ steam generated (ISSG) gate oxidation process.

引用

页码：73 / +

页数：2

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