New method for extraction of MOSFET parameters

被引：18
|
作者：
He, J [1 ]
Zhang, X [1 ]
Wang, YY [1 ]
Huang, R [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期
关键词：
field effect transistor; modeling; parameter extraction; semiconductor devices;
D O I：
10.1109/55.974590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V-th, mobility mu(o) and the mobility attenuation coefficient theta to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing validity of our presented method.
引用
收藏
页码：597 / 599
页数：3
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