Direct extraction method of SOI MOSFET transistors parameters

被引：0
|
作者：
Raskin, JP
机构：
来源：
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1996年 / 96卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (R-G, R-D and R-S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit.
引用
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页码：225 / 230
页数：6
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