Dual-Gate Silicon Carbide (SiC) Lateral Nanoelectromechanical Switches

We present demonstration and experimental results of four-terminal nanoscale electromechanical switches with a novel dual-gate design in a lateral configuration based on polycrystalline silicon carbide (poly-SiC) nanocantilevers. The switches operate at both room temperature and high temperature up to T approximate to 500 degrees C in ambient air with enhanced control over the distributed electrostatic actuation force, and also enable recovery from stiction at contact. We have experimentally demonstrated multiple switching cycles of these nanomechanical switches with different actuation control schemes, and active release from stiction by exploiting a repulsive mechanism. In combination with modeling of cantilever deflection, the experiments help reveal the coupled electromechanical behavior of the device when making contact during switching operations, and suggest possible correlation between the switch degradation observed over cycles and the elastic deformation of nanocantilevers.