The effect of emitter diffusion formation methods for laser doped selective emitter silicon solar cells

被引:0
|
作者
Kim, Jisoo [1 ]
Cho, Kyeong-Yeon [1 ]
Lee, Eun-Joo [1 ]
Hong, Keun-kee [1 ]
Lee, Hyun-Woo [1 ]
Shim, Ji-Myung [1 ]
Oh, Dong-Joon [1 ]
Shin, Jeong-Eun [1 ]
Kim, Ji-Sun [1 ]
Seo, Jae-Keun [1 ]
Lee, Soo-hong [2 ]
Hallam, Brett [3 ]
Wenham, Stuart [3 ]
Lee, Hae-Seok [1 ]
机构
[1] Shinsung Solar Energy, R&D Ctr, Solar Cell Div, Songnam 463420, Gyeonggi, South Korea
[2] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
[3] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
关键词
laser doping; selective emitter; Shinsung; plating; high efficiency;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper we represent three different methods of forming a lightly doped emitter for the fabrication of laser doped selective emitter solar cells on a pilot production line at Shinsung Solar Energy which effectively result in a single-sided diffusion. All the 6 inch samples suffer from low J(SC) compared to the 5inch sample due to a different plating ratio is between the 5 inch and 6 inch cells. We optimized the front electrode process by plating achieving an efficiency of 19.2% on a 6 inch solar grade p-type CZ wafer.
引用
收藏
页码:2178 / 2181
页数:4
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